elektronische bauelemente mmbt589 -1a , -50v pnp plastic encapsulated transistor 18-oct-2013 rev. b page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. top view a l c b d g h j f k e 1 2 3 1 2 3 ? ?? ? base ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? high current surface mount pn p silicon switching transistor for load management in portable applications marking package information maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit collector - base voltage v cbo -50 v collector - emitter voltage v ceo -30 v emitter - base voltage v ebo -5 v collector current - continuous i c -1 a collector power dissipation p c 310 mw thermal resistance from junction to ambient r ja 403 c / w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector-base breakdown voltage v (br)cbo -50 - - v i c = -100a, i e =0 collector-emitter breakdown voltage v (br)ceo -30 - - v i c = -10ma, i b =0 emitter-base breakdown voltage v (br)ebo -5 - - v i e = -100a, i c =0 collector cut-off current i cbo - - -0.1 a v cb = -30v, i e =0 collector-emitter cut-off current i ces - - -0.1 a v ces = -30v emitter cut-off current i ebo - - -0.1 a v eb = -4v, i c =0 100 - - v ce = -2v, i c = -1ma 100 - 300 v ce = -2v, i c = -500ma 80 - - v ce = -2v, i c = -1a dc current gain h fe 40 - - v ce = -2v, i c = -2a - - -0.25 i c = -500ma, i b = -50ma - - -0.3 i c = -1a, i b = -100ma collector-emitter saturation voltage v ce(sat) - - -0.65 v i c = -2a, i b = -200ma base-emitter saturation voltage v be(sat) - - -1.2 v i c = -1a, i b = -100ma transition frequency f t 100 - - mhz v ce = -5v,i c = -100ma, f=100mhz collector output capacitance c ob - - 15 pf f=1mhz 589 package mpq leader size sot-23 3k 7? inch so t -23 millimete r millimete r ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente mmbt589 -1a , -50v pnp plastic encapsulated transistor 18-oct-2013 rev. b page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
elektronische bauelemente mmbt589 -1a , -50v pnp plastic encapsulated transistor 18-oct-2013 rev. b page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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